dm g7401sfg q document number: d s 37980 rev. 2 - 2 1 of 8 www.diodes.com september 2015 ? diodes incorporated d mg7401sfg q new product p - channel enhancement mode mosfet powerdi ? product summary v (br)dss r ds(on) max i d max t a = + 25 c - 3 0v 13 m ? @ v gs = - 1 0 v - 9.8a 25m ? @ v gs = - 4.5 v - 7.0a description this mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. applications ? backlighting ? power m anagement f unctions ? dc - dc converters features and benefits ? low r ds(on) C ensures on - state losses are minimized ? small form factor thermally efficient package enables higher density end products ? occupies just 33% of the board area occupied by so - 8 enabling smaller end product ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: powerdi ? 3333 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminals: finish ? matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.0 1 7 4 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm g7401sfg q - 7 powerdi 3333 - 8 2 , 0 00 /tape & reel dmg7401sfg q - 13 powerdi 3333 - 8 3 , 000 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . a utomotive products are aec - q101 qualified and are ppap capable. automotive, aec - q101 and standard products are electrically and thermally the same, except where specified. for more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5 . for packaging details, go to our website at http : //www.diodes.com/products/packages.html . powerdi 3333 - 8 bottom view equivalent circuit top view powerdi is a registered trademark of diodes incorporated. d s g g ate protection diode esd protected s s s g d d d d pin 1
dm g7401sfg q document number: d s 37980 rev. 2 - 2 2 of 8 www.diodes.com september 2015 ? diodes incorporated d mg7401sfg q new product marking information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 30 v gate - source voltage v gss 25 v continuous drain current (note 7 ) v gs = - 10 v steady state t a = + 25 c t a = + 70 c i d - 9.8 - 7.7 a t<10s t a = + 25 c t a = + 70 c i d - 13.5 - 10.8 a maximum continuous body diode forward current (note 6 ) i s - 3.0 a pulsed drain current ( 10 s pulse, duty cycle = 1% ) i dm - 80 a avalanche current (notes 8 & 9 ) i ar 14 a repetitive avalanche energy (notes 8 & 9 ) l = 1mh e ar 104 mj thermal characteristics characteristic symbol value units total power dissipation (note 6 ) t a = + 25 c p d 0.94 w t a = + 70 c 0.6 thermal resistance, junction to ambient (note 6 ) steady state r ja 137 c/w t< 10 s 82 c/w total power dissipation (note 7 ) t a = + 25 c p d 2.2 w t a = + 70 c 1.3 thermal resistance, junction to ambient (note 7 ) steady state r ja 60 c/w t<10s 36 c/w thermal resistance, junction to case (note 7 ) r j c 3.0 c/w operating and storage temperature range t j, t stg - 5 5 to + 15 0 c notes: 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout . 7 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1 - inch square copper plate. 8 . i ar and e ar rating are based on low frequency and duty cycles to keep t j = + 25c . g7 5 = product m arking c ode yyww = date c ode m arking yy = last d igit of y ear (ex: 10 for 2010) ww = week c ode (01 C g75 y y w w
dm g7401sfg q document number: d s 37980 rev. 2 - 2 3 of 8 www.diodes.com september 2015 ? diodes incorporated d mg7401sfg q new product electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9 ) drain - source breakdown voltage bv dss - 30 gs = 0v, i d = - 250a dss ds = - 30 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 9 ) gate threshold voltage v gs(th) - 1.7 ds = v gs , i d = - 250 a ds (on) gs = - 20 v, i d = - 12a gs = - 10 v, i d = - 9a gs = - 4.5 v, i d = - 5a forward transfer admittance |y fs | ds = - 5 v, i d = - 10 a dynamic characteristics (note 10 ) input capacitance c iss ds = - 15 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = 4.5 v ) q g ds = - 15 v, i d = - 12 a total gate charge ( v gs = 10 v ) q g gs gd d(on) dd = - 15 v, v gs = - 10 v, r l = 1.25 g = 3 r d(off) f body diode characteristic s diode forward voltage v sd gs = 0v, i s = - 1a reverse recovery time (note 10 ) t rr s = - 9.5 a , di /d t = 100a/ rr notes: 9 . short duration pulse test used to minimize self - heating effect . 10 . guaranteed by design. not subject to product testing .
dm g7401sfg q document number: d s 37980 rev. 2 - 2 4 of 8 www.diodes.com september 2015 ? diodes incorporated d mg7401sfg q new product 0 0.5 1.0 1.5 2.0 -v , drain -source voltage(v) fig. 1 typical output characteristics ds 0 5 10 15 20 25 30 - i , d r a i n c u r r e n t ( a ) d v = 3.0v gs v = 3.5v gs v = 4.0v gs v = 4.5v gs v = 10v gs v = 5.0v gs 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -v , gate-source voltage (v) gs fig. 2 typical transfer characteristics 0 5 10 15 20 25 30 - i , d r a i n c u r r e n t ( a ) d t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds 0 5 10 15 20 25 30 -i , drain source current fig. 3 typical on-resistance vs. drain current and gate voltage d 0 0.01 0.02 0.03 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 5 10 15 20 25 30 -i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d 0 0.01 0.02 0.03 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? v = -4.5v gs -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 5 on-resistance variation with temperature 0.5 0.7 0.9 1.1 1.3 1.5 1.7 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.004 0.008 0.012 0.016 0.020 0.024 0.028 0.032 0.036 0.040 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 6 on-resistance variation with temperature v = -10v i = a gs d -10 v = 5v i = a gs d -4. -5 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ?
dm g7401sfg q document number: d s 37980 rev. 2 - 2 5 of 8 www.diodes.com september 2015 ? diodes incorporated d mg7401sfg q new product -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 7 gate threshold variation vs. ambient temperature a 0 0.5 1.0 1.5 2.0 2.5 3.0 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.4 0.6 0.8 1.0 1.2 -v , source-drain voltage (v) fig. 8 diode forward voltage vs. current sd 0 5 10 15 20 25 30 - i , s o u r c e c u r r e n t ( a ) s 100 1,000 10,000 c , j u n c t i o n c a p a c i t a n c e ( p f ) t 0 5 10 15 20 25 30 -v , drain-source voltage (v) fig. 9 typical junction capacitance ds c oss c rss f = 1mhz c iss 0 5 10 15 20 25 30 35 40 45 q , total gate charge (nc) fig. 10 gate-charge characteristics g 0 2 4 6 8 10 - v , g a t e - s o u r c e v o l t a g e ( v ) g s 0 50 100 150 200 250 300 350 400 1e-05 1e-04 0.001 0.01 0.1 1 10 100 1,000 p , p e a k t r a n s i e n t p o i w e r ( w ) ( p k ) t1, pulse duration time (sec) fig. 11 single pulse maximum power dissipation single pulse r = 135 c/w r = r * r t - t = p * r ? ?? ? ja ja(t) (t) ja j a ja(t) ? 0.01 0.1 1 10 100 -v , drain-source voltage (v) fig. 12 soa, safe operation area ds 0.01 0.1 1 10 100 - i , d r a i n c u r r e n t ( a ) d r limited ds(on) t = 150c t = 25c j(max) a v = -10v single pulse gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w
dm g7401sfg q document number: d s 37980 rev. 2 - 2 6 of 8 www.diodes.com september 2015 ? diodes incorporated d mg7401sfg q new product 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 13 transient thermal resistance 0.001 0.01 0.1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 1 r (t) = r(t) * r r = 135c/w duty cycle, d = t1/ t2 ?? ? ja ja ja d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse
dm g7401sfg q document number: d s 37980 rev. 2 - 2 7 of 8 www.diodes.com september 2015 ? diodes incorporated d mg7401sfg q new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. powerdi 3333 - 8 powerdi3333 - 8 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? 0.203 b 0.27 0.37 0.32 b2 ? ? ? ? 0.20 d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3.25 3.35 3.30 e2 1.56 1.66 1.61 e ? ? ? ? 0.65 e1 0.79 0.89 0.84 l 0.35 0.45 0.40 l1 ? ? ? ? 0.39 z ? ? ? ? 0.515 all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. powerdi 3333 - 8 dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 e1 1 8 d d2 e e b e2 a a3 pin #1 id seating plane l(4x) a1 l1(3x) b2(4x) z(4x) x3 y3 x y c y1 y2 x1 x2 1 8
dm g7401sfg q document number: d s 37980 rev. 2 - 2 8 of 8 www.diodes.com september 2015 ? diodes incorporated d mg7401sfg q new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference . only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in signific ant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirem ents concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. furthe r, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
|
